Silicon Carbide Integrated Circuits With Stable Operation Over a Wide Temperature Range
نویسندگان
چکیده
منابع مشابه
Silicon Carbide Bipolar Integrated Circuits for High Temperature Applications
Silicon carbide (SiC) is a semiconductor that provides significant advantages for high-power and high-temperature applications thanks to its wide bandgap, which is several times larger than silicon. The resulting high breakdown field, high thermal conductivity and high intrinsic temperature (well above 600 °C) allow high temperature operation of SiC devices and relaxed cooling requirements. In ...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2014
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2014.2362815